IPB80N08S406ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

270 mJ

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Halogen Free :

Halogen Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

Automotive, AEC-Q101, OptiMOS™

Terminal Form :

Gull wing

Pbfree Code :

yes

Transistor Element Material :

SILICON

Lead Free :

Contains Lead

Continuous Drain Current (ID) :

80A

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Published :

2013

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 80A, 10V

Power Dissipation-Max :

150W Tc

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

320A

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4V @ 90µA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Reach Compliance Code :

not_compliant

Number of Terminations :

2

Drain-source On Resistance-Max :

0.0047Ohm

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Max Dual Supply Voltage :

80V

Input Capacitance (Ciss) (Max) @ Vds :

4800pF @ 25V

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

14 Weeks