IPB80N08S207ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Number of Elements :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

20V

Series :

OptiMOS™

Factory Lead Time :

10 Weeks

Terminal Position :

Single

Max Dual Supply Voltage :

75V

Lead Free :

Contains Lead

Number of Terminations :

2

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Avalanche Energy Rating (Eas) :

810 mJ

Drain-source On Resistance-Max :

0.0071Ohm

Reach Compliance Code :

not_compliant

Number of Pins :

3

Rise Time :

50ns

ECCN Code :

EAR99

Turn On Delay Time :

26 ns

Continuous Drain Current (ID) :

80A

Turn-Off Delay Time :

61 ns

Input Capacitance (Ciss) (Max) @ Vds :

4700pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Vgs (Max) :

±20V

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Published :

2006

Power Dissipation-Max :

300W Tc

Rds On (Max) @ Id, Vgs :

7.1m Ω @ 80A, 10V

Halogen Free :

Halogen Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

30 ns