IPB80N07S405ATMA1

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Mfr.Part #
IPB80N07S405ATMA1
Manufacturer
Infineon Technologies
Package / Case
Datasheet
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Description
MOSFET N-CH TO263-3
Stock
6,436
In Stock :
6,436

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Reference Standard :
AEC-Q101
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Surface Mount :
yes
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
RoHS Status :
RoHS Compliant
Polarity/Channel Type :
N-Channel
Avalanche Energy Rating (Eas) :
240 mJ
DS Breakdown Voltage-Min :
75V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JEDEC-95 Code :
TO-263AB
Packaging :
Tape and Reel (TR)
Terminal Form :
Gull wing
Configuration :
SINGLE WITH BUILT-IN DIODE
Transistor Element Material :
SILICON
Operating Temperature (Min) :
-55°C
Published :
2014
Drain Current-Max (Abs) (ID) :
80A
Drain-source On Resistance-Max :
0.0052Ohm
Terminal Position :
Single
Number of Terminations :
2
Operating Mode :
ENHANCEMENT MODE
Case Connection :
DRAIN
Pulsed Drain Current-Max (IDM) :
320A
JESD-30 Code :
R-PSSO-G2
Datasheets
IPB80N07S405ATMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPB80N07S405ATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, IPB80N07S405ATMA1 pinout, IPB80N07S405ATMA1 datasheet PDF, IPB80N07S405ATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPB80N07S405ATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



Tape & Reel (TR)

IPB80N07S405ATMA1 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 240 mJ.There is no drain current on this device since the maximum continuous current it can conduct is 80A.There is a peak drain current of 320A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 75V, it should remain above the 75V level.

IPB80N07S405ATMA1 Features


the avalanche energy rating (Eas) is 240 mJ
based on its rated peak drain current 320A.


IPB80N07S405ATMA1 Applications


There are a lot of Infineon Technologies
IPB80N07S405ATMA1 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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