IPB80N06S4L07ATMA2
- Mfr.Part #
- IPB80N06S4L07ATMA2
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 80A TO263-3
- Stock
- 9,482
- In Stock :
- 9,482
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Case Connection :
- DRAIN
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 2.2V @ 40μA
- Number of Terminations :
- 2
- Power Dissipation-Max :
- 79W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Length :
- 10mm
- Drain to Source Breakdown Voltage :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 6.7m Ω @ 80A, 10V
- Weight :
- 1.946308g
- Height :
- 4.4mm
- Turn On Delay Time :
- 10 ns
- RoHS Status :
- ROHS3 Compliant
- Max Dual Supply Voltage :
- 60V
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 16 Weeks
- Width :
- 9.25mm
- Vgs (Max) :
- ±16V
- Transistor Element Material :
- SILICON
- Rise Time :
- 3ns
- Drain-source On Resistance-Max :
- 0.0064Ohm
- JESD-30 Code :
- R-PSSO-G2
- Continuous Drain Current (ID) :
- 80A
- Fall Time (Typ) :
- 8 ns
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Gate Charge (Qg) (Max) @ Vgs :
- 75nC @ 10V
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 50 ns
- Number of Channels :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~175°C TJ
- Gate to Source Voltage (Vgs) :
- 16V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5680pF @ 25V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Series :
- Automotive, AEC-Q101, OptiMOS™
- Number of Pins :
- 3
- Published :
- 2009
- Lead Free :
- Lead Free
- Reach Compliance Code :
- not_compliant
- Datasheets
- IPB80N06S4L07ATMA2

N-Channel Tape & Reel (TR) 6.7m Ω @ 80A, 10V ±16V 5680pF @ 25V 75nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB80N06S4L07ATMA2 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5680pF @ 25V.This device has a continuous drain current (ID) of [80A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 50 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 16V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 60V.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
IPB80N06S4L07ATMA2 Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 50 ns
IPB80N06S4L07ATMA2 Applications
There are a lot of Infineon Technologies
IPB80N06S4L07ATMA2 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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