IPB80N06S4L05ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

14 ns

Mount :

Surface Mount

Number of Pins :

3

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Rise Time :

4ns

Width :

9.25mm

Max Dual Supply Voltage :

60V

Vgs (Max) :

±16V

Packaging :

Tape and Reel (TR)

Power Dissipation :

107W

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

80 ns

Input Capacitance (Ciss) (Max) @ Vds :

8180pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

107W Tc

Series :

Automotive, AEC-Q101, OptiMOS™

Drain-source On Resistance-Max :

0.0048Ohm

FET Type :

N-Channel

Length :

10mm

Published :

2009

Continuous Drain Current (ID) :

80A

Rds On (Max) @ Id, Vgs :

5.1m Ω @ 80A, 10V

Vgs(th) (Max) @ Id :

2.2V @ 60μA

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Height :

4.4mm

Halogen Free :

Halogen Free

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Factory Lead Time :

16 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Reach Compliance Code :

not_compliant

Fall Time (Typ) :

13 ns

Number of Channels :

1

Gate to Source Voltage (Vgs) :

16V

Weight :

1.946308g

Number of Elements :

1

Drain to Source Breakdown Voltage :

60V

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Terminal Form :

Gull wing

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

80A Tc