IPB80N06S4L05ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Power Dissipation :

107W

Number of Elements :

1

Series :

Automotive, AEC-Q101, OptiMOS™

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Vgs(th) (Max) @ Id :

2.2V @ 60μA

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2

Published :

2009

Input Capacitance (Ciss) (Max) @ Vds :

8180pF @ 25V

Gate to Source Voltage (Vgs) :

16V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

3

FET Type :

N-Channel

Case Connection :

DRAIN

Rise Time :

4ns

Reach Compliance Code :

not_compliant

Width :

9.25mm

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Factory Lead Time :

16 Weeks

Weight :

1.946308g

Drain-source On Resistance-Max :

0.0048Ohm

Pbfree Code :

yes

Halogen Free :

Halogen Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Turn-Off Delay Time :

80 ns

Continuous Drain Current (ID) :

80A

Max Dual Supply Voltage :

60V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

Vgs (Max) :

±16V

Drain to Source Breakdown Voltage :

60V

Power Dissipation-Max :

107W Tc

Length :

10mm

Turn On Delay Time :

14 ns

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

5.1m Ω @ 80A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

13 ns

Height :

4.4mm

Element Configuration :

Single