IPB80N06S407ATMA2
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- Mfr.Part #
- IPB80N06S407ATMA2
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 80A TO263-3
- Stock
- 69,052
- In Stock ：
- 69,052
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4V @ 40μA
- Rise Time :
- 3ns
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Power Dissipation :
- 79W
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 23 ns
- Height :
- 4.4mm
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 79W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Resistance :
- 7.1mOhm
- Reach Compliance Code :
- not_compliant
- Turn On Delay Time :
- 15 ns
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 9.25mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Number of Terminations :
- 2
- JESD-30 Code :
- R-PSSO-G2
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On Max :
- 7.1 mΩ
- Mount :
- Surface Mount
- Factory Lead Time :
- 16 Weeks
- Continuous Drain Current (ID) :
- 80A
- Length :
- 10mm
- Gate Charge (Qg) (Max) @ Vgs :
- 56nC @ 10V
- Series :
- Automotive, AEC-Q101, OptiMOS™
- Pulsed Drain Current-Max (IDM) :
- 320A
- FET Type :
- N-Channel
- Published :
- 2009
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Packaging :
- Tape and Reel (TR)
- Weight :
- 1.946308g
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 5 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Dual Supply Voltage :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- IPB80N06S407ATMA2
N-Channel Tape & Reel (TR) ±20V 4500pF @ 25V 56nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB80N06S407ATMA2 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4500pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 80A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 23 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 320A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 7.1mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 15 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 60V, it supports the maximal dual supply voltage.By using drive voltage (10V), this device helps reduce its overall power consumption.
IPB80N06S407ATMA2 Features
a continuous drain current (ID) of 80A
the turn-off delay time is 23 ns
based on its rated peak drain current 320A.
single MOSFETs transistor is 7.1mOhm
IPB80N06S407ATMA2 Applications
There are a lot of Infineon Technologies
IPB80N06S407ATMA2 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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