IPB80N06S405ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

9.25mm

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 80A, 10V

Vgs(th) (Max) @ Id :

4V @ 60μA

Drain to Source Breakdown Voltage :

60V

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Fall Time (Typ) :

8 ns

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Case Connection :

DRAIN

Turn On Delay Time :

20 ns

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Weight :

1.946308g

Turn-Off Delay Time :

35 ns

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

6500pF @ 25V

Reach Compliance Code :

not_compliant

Power Dissipation :

107W

Vgs (Max) :

±20V

Rise Time :

5ns

FET Type :

N-Channel

Power Dissipation-Max :

107W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Max Dual Supply Voltage :

60V

Mount :

Surface Mount

Series :

Automotive, AEC-Q101, OptiMOS™

Element Configuration :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Packaging :

Tape and Reel (TR)

Published :

2009

Halogen Free :

Halogen Free

Drain-source On Resistance-Max :

0.0057Ohm

Gate Charge (Qg) (Max) @ Vgs :

81nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

2

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

4.4mm

Length :

10mm

Number of Pins :

3

Factory Lead Time :

16 Weeks

Continuous Drain Current (ID) :

80A