IPB80N06S405ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

35 ns

Vgs(th) (Max) @ Id :

4V @ 60μA

Reach Compliance Code :

not_compliant

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

6500pF @ 25V

Weight :

1.946308g

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

16 Weeks

Power Dissipation :

107W

Drain-source On Resistance-Max :

0.0057Ohm

Fall Time (Typ) :

8 ns

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

Number of Terminations :

2

Power Dissipation-Max :

107W Tc

Element Configuration :

Single

Width :

9.25mm

Number of Elements :

1

Halogen Free :

Halogen Free

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Series :

Automotive, AEC-Q101, OptiMOS™

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

81nC @ 10V

Mount :

Surface Mount

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Height :

4.4mm

Length :

10mm

Rise Time :

5ns

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

80A

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 80A, 10V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

60V

Turn On Delay Time :

20 ns

Number of Pins :

3

Max Dual Supply Voltage :

60V

Published :

2009