IPB80N06S405ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

OptiMOS™

Operating Temperature :

-55°C~175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

6500pF @ 25V

Drain-source On Resistance-Max :

0.0057Ohm

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation-Max :

107W Tc

Vgs(th) (Max) @ Id :

4V @ 60μA

DS Breakdown Voltage-Min :

60V

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

81nC @ 10V

Drain Current-Max (Abs) (ID) :

80A

Surface Mount :

yes

Transistor Element Material :

SILICON

Published :

2009

Avalanche Energy Rating (Eas) :

152 mJ

Pulsed Drain Current-Max (IDM) :

320A

Rds On (Max) @ Id, Vgs :

5.4m Ω @ 80A, 10V

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

60V

Number of Elements :

1

Packaging :

Tape and Reel (TR)