IPB80N06S3L-06

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

16V

Pulsed Drain Current-Max (IDM) :

320A

Qualification Status :

Not Qualified

Pin Count :

4

Rds On (Max) @ Id, Vgs :

5.6m Ω @ 56A, 10V

Continuous Drain Current (ID) :

80A

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

136W

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

RoHS Compliant

JESD-609 Code :

e3

Number of Terminations :

2

Power Dissipation-Max :

136W Tc

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Number of Elements :

1

FET Type :

N-Channel

Rise Time :

43ns

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Voltage - Rated DC :

55V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Terminal Finish :

MATTE TIN

Vgs(th) (Max) @ Id :

2.2V @ 80μA

Avalanche Energy Rating (Eas) :

250 mJ

Vgs (Max) :

±16V

Input Capacitance (Ciss) (Max) @ Vds :

9417pF @ 25V

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.0056Ohm

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Published :

2007

Turn-Off Delay Time :

55 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Additional Feature :

LOGIC LEVEL COMPATIBLE

Mount :

Surface Mount

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

196nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

80A

Fall Time (Typ) :

39 ns

Drain to Source Breakdown Voltage :

55V

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Series :

OptiMOS™