IPB80N06S3L-05

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Fall Time (Typ) :

41 ns

Terminal Form :

Gull wing

Rise Time :

49ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain-source On Resistance-Max :

0.0077Ohm

Vgs(th) (Max) @ Id :

2.2V @ 115μA

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

13060pF @ 25V

Continuous Drain Current (ID) :

80A

Operating Mode :

ENHANCEMENT MODE

Series :

OptiMOS™

Qualification Status :

Not Qualified

Power Dissipation :

165W

Additional Feature :

LOGIC LEVEL COMPATIBLE

Pulsed Drain Current-Max (IDM) :

320A

Avalanche Energy Rating (Eas) :

345 mJ

Power Dissipation-Max :

165W Tc

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 69A, 10V

Transistor Element Material :

SILICON

Number of Terminations :

2

Mount :

Surface Mount

Case Connection :

DRAIN

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

273nC @ 10V

Gate to Source Voltage (Vgs) :

16V

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

MATTE TIN

Published :

2007

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

55V

Vgs (Max) :

±16V

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Single

Pin Count :

4

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Current Rating :

80A

Turn-Off Delay Time :

65 ns

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Voltage - Rated DC :

55V

JESD-30 Code :

R-PSSO-G2

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Packaging :

Tape and Reel (TR)