IPB80N06S3-07

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

41ns

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4V @ 80μA

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pin Count :

4

Terminal Form :

Gull wing

Vgs (Max) :

±20V

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

JESD-30 Code :

R-PSSO-G2

Additional Feature :

AVALANCHE RATED

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

RoHS Compliant

Current Rating :

80A

Power Dissipation :

135W

Terminal Finish :

MATTE TIN

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 51A, 10V

JESD-609 Code :

e3

Fall Time (Typ) :

33 ns

Number of Terminations :

2

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

55V

Voltage - Rated DC :

55V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

34 ns

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

80A

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Series :

OptiMOS™

Time@Peak Reflow Temperature-Max (s) :

40

Input Capacitance (Ciss) (Max) @ Vds :

7768pF @ 25V

Power Dissipation-Max :

135W Tc

Drain-source On Resistance-Max :

0.0065ohm

Number of Elements :

1

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Published :

2007