IPB80N06S3-05

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

FET Type :

N-Channel

Series :

OptiMOS™

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

5.1m Ω @ 63A, 10V

Published :

2007

Power Dissipation :

165W

JESD-30 Code :

R-PSSO-G2

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 110μA

Drain to Source Breakdown Voltage :

55V

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

10760pF @ 25V

Qualification Status :

Not Qualified

Fall Time (Typ) :

47 ns

Continuous Drain Current (ID) :

80A

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

345 mJ

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Vgs (Max) :

±20V

Turn-Off Delay Time :

46 ns

Peak Reflow Temperature (Cel) :

260

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Terminal Finish :

MATTE TIN

Packaging :

Tape and Reel (TR)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate to Source Voltage (Vgs) :

20V

Pin Count :

4

Mount :

Surface Mount

Number of Terminations :

2

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

165W Tc

Number of Elements :

1

Rise Time :

50ns

Pulsed Drain Current-Max (IDM) :

320A

Time@Peak Reflow Temperature-Max (s) :

40