IPB80N06S2LH5ATMA4
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- Mfr.Part #
- IPB80N06S2LH5ATMA4
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 80A TO263-3
- Stock
- 5,218
- In Stock ：
- 5,218
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 75 ns
- Width :
- 9.25mm
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 80A
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- Number of Terminations :
- 2
- Avalanche Energy Rating (Eas) :
- 700 mJ
- Rise Time :
- 23ns
- Halogen Free :
- Halogen Free
- Number of Pins :
- 3
- Rds On (Max) @ Id, Vgs :
- 4.7m Ω @ 80A, 10V
- Fall Time (Typ) :
- 22 ns
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PSSO-G2
- Factory Lead Time :
- 14 Weeks
- Mount :
- Surface Mount
- Height :
- 4.4mm
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.0062Ohm
- Power Dissipation :
- 300W
- Published :
- 2006
- Max Dual Supply Voltage :
- 55V
- Power Dissipation-Max :
- 300W Tc
- Vgs (Max) :
- ±20V
- Reach Compliance Code :
- not_compliant
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Series :
- OptiMOS™
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 19 ns
- Reference Standard :
- AEC-Q101
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~175°C TJ
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 5000pF @ 25V
- Length :
- 10mm
- Drain to Source Breakdown Voltage :
- 55V
- Datasheets
- IPB80N06S2LH5ATMA4
N-Channel Tape & Reel (TR) 4.7m Ω @ 80A, 10V ±20V 5000pF @ 25V 190nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB80N06S2LH5ATMA4 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 700 mJ.A device's maximum input capacitance is 5000pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 80A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=55V, and this device has a drain-to-source breakdown voltage of 55V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 75 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 19 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 55V, it supports maximum dual supply voltages.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
IPB80N06S2LH5ATMA4 Features
the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 75 ns
IPB80N06S2LH5ATMA4 Applications
There are a lot of Infineon Technologies
IPB80N06S2LH5ATMA4 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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