IPB80N06S2LH5

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

OptiMOS™

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

320A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Number of Terminations :

2

Power Dissipation-Max :

300W Tc

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

DS Breakdown Voltage-Min :

55V

FET Type :

N-Channel

Reach Compliance Code :

Compliant

RoHS Status :

RoHS Compliant

Drain-source On Resistance-Max :

0.0062Ohm

Avalanche Energy Rating (Eas) :

700 mJ

Pin Count :

4

Current - Continuous Drain (Id) @ 25°C :

80A Tc

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

190nC @ 10V

Terminal Position :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Additional Feature :

LOGIC LEVEL COMPATIBLE

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

55V

Drain Current-Max (Abs) (ID) :

80A

Published :

2006

Rds On (Max) @ Id, Vgs :

4.7m Ω @ 80A, 10V

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

5000pF @ 25V

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

2V @ 250μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99