IPB80N06S2L11ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

280 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

46 ns

Pbfree Code :

yes

Mount :

Surface Mount

Fall Time (Typ) :

13 ns

Vgs(th) (Max) @ Id :

2V @ 93μA

Number of Elements :

1

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.0147Ohm

Number of Terminations :

2

FET Type :

N-Channel

Mounting Type :

Surface Mount

Power Dissipation :

158W

Factory Lead Time :

10 Weeks

Published :

2010

Case Connection :

DRAIN

Max Dual Supply Voltage :

55V

Rise Time :

32ns

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Additional Feature :

LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

Lead Free :

Contains Lead

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

158W Tc

Halogen Free :

Halogen Free

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

2075pF @ 25V

Width :

9.25mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Reach Compliance Code :

not_compliant

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

11 ns

Rds On (Max) @ Id, Vgs :

10.7m Ω @ 40A, 10V

Height :

4.4mm

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Continuous Drain Current (ID) :

80A

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Series :

OptiMOS™

Packaging :

Tape and Reel (TR)

Length :

10mm

Drain to Source Breakdown Voltage :

55V