IPB80N06S2L11ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

320A

Additional Feature :

LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

Drain-source On Resistance-Max :

0.0147Ohm

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

280 mJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Capacitance (Ciss) (Max) @ Vds :

2075pF @ 25V

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Published :

2010

Number of Elements :

1

DS Breakdown Voltage-Min :

55V

Rds On (Max) @ Id, Vgs :

10.7m Ω @ 60A, 10V

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2V @ 93μA

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Series :

OptiMOS™

Drain to Source Voltage (Vdss) :

55V

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

80A Tc

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Terminal Position :

Single

Power Dissipation-Max :

158W Tc

Drain Current-Max (Abs) (ID) :

80A

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)