IPB80N06S2L09ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

10 ns

Radiation Hardening :

No

Power Dissipation-Max :

190W Tc

Published :

2006

Gate Charge (Qg) (Max) @ Vgs :

105nC @ 10V

Fall Time (Typ) :

18 ns

Turn-Off Delay Time :

53 ns

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

8.2m Ω @ 52A, 10V

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

FET Type :

N-Channel

Number of Pins :

3

Terminal Form :

Gull wing

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

2

Factory Lead Time :

10 Weeks

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Continuous Drain Current (ID) :

80A

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

OptiMOS™

Rise Time :

19ns

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Max Dual Supply Voltage :

55V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Drain-source On Resistance-Max :

0.011Ohm

Input Capacitance (Ciss) (Max) @ Vds :

2620pF @ 25V

Vgs(th) (Max) @ Id :

2V @ 125μA