IPB80N06S2L09ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

370 mJ

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2006

Terminal Position :

Single

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

2V @ 125μA

Surface Mount :

yes

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

105nC @ 10V

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

80A

Operating Temperature :

-55°C~175°C TJ

DS Breakdown Voltage-Min :

55V

Pulsed Drain Current-Max (IDM) :

320A

Drain-source On Resistance-Max :

0.011Ohm

Number of Elements :

1

Drain to Source Voltage (Vdss) :

55V

Power Dissipation-Max :

190W Tc

Transistor Element Material :

SILICON

Series :

OptiMOS™

Input Capacitance (Ciss) (Max) @ Vds :

2620pF @ 25V

Mounting Type :

Surface Mount

Additional Feature :

LOGIC LEVEL COMPATIBLE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

8.2m Ω @ 52A, 10V

Current - Continuous Drain (Id) @ 25°C :

80A Tc