IPB80N06S2L07ATMA3

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.0097Ohm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Factory Lead Time :

10 Weeks

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 150μA

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

320A

Operating Temperature :

-55°C~175°C TJ

Reach Compliance Code :

not_compliant

Case Connection :

DRAIN

Terminal Position :

Single

Lead Free :

Contains Lead

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Published :

2006

Power Dissipation-Max :

210W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

3160pF @ 25V

Max Dual Supply Voltage :

55V

Avalanche Energy Rating (Eas) :

450 mJ

Rds On (Max) @ Id, Vgs :

6.7m Ω @ 60A, 10V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Continuous Drain Current (ID) :

80A

Number of Elements :

1

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

LOGIC LEVEL COMPATIBLE

Series :

OptiMOS™