IPB80N06S2L07ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

LOGIC LEVEL COMPATIBLE

Terminal Form :

Gull wing

Published :

2006

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

320A

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain Current-Max (Abs) (ID) :

80A

Rds On (Max) @ Id, Vgs :

6.7m Ω @ 60A, 10V

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

55V

Power Dissipation-Max :

210W Tc

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.0097Ohm

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

55V

Input Capacitance (Ciss) (Max) @ Vds :

3160pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Number of Terminations :

2

Series :

OptiMOS™

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

450 mJ

Surface Mount :

yes

Number of Elements :

1

Terminal Position :

Single

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2V @ 150μA

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2