IPB80N06S2L06ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

9.25mm

Additional Feature :

LOGIC LEVEL COMPATIBLE

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Fall Time (Typ) :

20 ns

Operating Temperature :

-55°C~175°C TJ

Lead Free :

Contains Lead

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Factory Lead Time :

10 Weeks

Rise Time :

21ns

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation :

250W

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

3800pF @ 25V

Reach Compliance Code :

not_compliant

Power Dissipation-Max :

250W Tc

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

55V

Turn On Delay Time :

11 ns

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Height :

4.4mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Turn-Off Delay Time :

60 ns

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Length :

10mm

Vgs(th) (Max) @ Id :

2V @ 180μA

Halogen Free :

Halogen Free

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

3

Case Connection :

DRAIN

FET Type :

N-Channel

Published :

2006

Continuous Drain Current (ID) :

80A

Max Dual Supply Voltage :

55V

Rds On (Max) @ Id, Vgs :

6m Ω @ 69A, 10V

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.0084Ohm

Series :

OptiMOS™

JESD-30 Code :

R-PSSO-G2