IPB80N06S2L05ATMA1
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- Mfr.Part #
- IPB80N06S2L05ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 80A TO263-3
- Stock
- 1,090
- In Stock ：
- 1,090
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 230nC @ 10V
- Halogen Free :
- Halogen Free
- Number of Pins :
- 3
- Fall Time (Typ) :
- 90 ns
- Terminal Finish :
- Tin (Sn)
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSSO-G2
- RoHS Status :
- RoHS Compliant
- Rise Time :
- 93ns
- Case Connection :
- DRAIN
- Lead Free :
- Contains Lead
- Terminal Position :
- Single
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Vgs (Max) :
- ±20V
- Max Dual Supply Voltage :
- 55V
- Number of Terminations :
- 2
- Input Capacitance (Ciss) (Max) @ Vds :
- 5700pF @ 25V
- Turn On Delay Time :
- 19 ns
- Continuous Drain Current (ID) :
- 80A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 300W Tc
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Operating Temperature :
- -55°C~175°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Series :
- OptiMOS™
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Terminal Form :
- Gull wing
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Avalanche Energy Rating (Eas) :
- 800 mJ
- JESD-609 Code :
- e3
- Drain-source On Resistance-Max :
- 0.0057Ohm
- Mounting Type :
- Surface Mount
- Published :
- 2006
- Turn-Off Delay Time :
- 67 ns
- Rds On (Max) @ Id, Vgs :
- 4.5m Ω @ 80A, 10V
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- IPB80N06S2L05ATMA1
N-Channel Tape & Reel (TR) 4.5m Ω @ 80A, 10V ±20V 5700pF @ 25V 230nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB80N06S2L05ATMA1 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 800 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5700pF @ 25V.This device has a continuous drain current (ID) of [80A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 67 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 19 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 55V.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
IPB80N06S2L05ATMA1 Features
the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 80A
the turn-off delay time is 67 ns
IPB80N06S2L05ATMA1 Applications
There are a lot of Infineon Technologies
IPB80N06S2L05ATMA1 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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