IPB80N06S2L-H5

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

700 mJ

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

2V @ 250μA

Drain Current-Max (Abs) (ID) :

80A

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Pbfree Code :

yes

Additional Feature :

LOGIC LEVEL COMPATIBLE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2006

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

4.7m Ω @ 80A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Voltage (Vdss) :

55V

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

55V

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

RoHS Compliant

Pin Count :

4

Pulsed Drain Current-Max (IDM) :

320A

Series :

OptiMOS™

Power Dissipation-Max :

300W Tc

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

190nC @ 10V

Mounting Type :

Surface Mount

Reach Compliance Code :

Compliant

Number of Terminations :

2

Drain-source On Resistance-Max :

0.0062Ohm

Current - Continuous Drain (Id) @ 25°C :

80A Tc

JESD-609 Code :

e3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Finish :

Matte Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

5000pF @ 25V

Transistor Element Material :

SILICON