IPB80N06S2H5ATMA2
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- Mfr.Part #
- IPB80N06S2H5ATMA2
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 80A TO263-3
- Stock
- 3,589
- In Stock ：
- 3,589
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Halogen Free :
- Halogen Free
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Fall Time (Typ) :
- 22 ns
- Operating Temperature :
- -55°C~175°C TJ
- Avalanche Energy Rating (Eas) :
- 700 mJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rise Time :
- 23ns
- Turn-Off Delay Time :
- 48 ns
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Drain to Source Breakdown Voltage :
- 55V
- Drain-source On Resistance-Max :
- 0.0052Ohm
- JESD-30 Code :
- R-PSSO-G2
- Rds On (Max) @ Id, Vgs :
- 5.2m Ω @ 80A, 10V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Series :
- OptiMOS™
- FET Type :
- N-Channel
- Max Dual Supply Voltage :
- 55V
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Form :
- Gull wing
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 300W Tc
- Reach Compliance Code :
- not_compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 4400pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 155nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mount :
- Surface Mount
- Case Connection :
- DRAIN
- Number of Elements :
- 1
- Height :
- 4.4mm
- Width :
- 9.25mm
- Factory Lead Time :
- 10 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 230μA
- Length :
- 10mm
- Turn On Delay Time :
- 23 ns
- Number of Terminations :
- 2
- Power Dissipation :
- 300W
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 80A
- Vgs (Max) :
- ±20V
- Published :
- 1997
- ECCN Code :
- EAR99
- Datasheets
- IPB80N06S2H5ATMA2
N-Channel Tape & Reel (TR) 5.2m Ω @ 80A, 10V ±20V 4400pF @ 25V 155nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB80N06S2H5ATMA2 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 700 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4400pF @ 25V.This device conducts a continuous drain current (ID) of 80A, which is the maximum continuous current transistor can conduct.Using VGS=55V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 55V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 48 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 23 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 55V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPB80N06S2H5ATMA2 Features
the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 48 ns
IPB80N06S2H5ATMA2 Applications
There are a lot of Infineon Technologies
IPB80N06S2H5ATMA2 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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