IPB80N06S2H5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2006

Power Dissipation-Max :

300W Tc

Avalanche Energy Rating (Eas) :

700 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Series :

OptiMOS™

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.0052Ohm

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

4400pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Surface Mount :

yes

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

320A

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

5.2m Ω @ 80A, 10V

Terminal Form :

Gull wing

Number of Terminations :

2

Drain Current-Max (Abs) (ID) :

80A

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

55V

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4V @ 230μA

Number of Elements :

1

DS Breakdown Voltage-Min :

55V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

Transistor Element Material :

SILICON