IPB80N06S209ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

80A

Reach Compliance Code :

not_compliant

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

10 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2006

Transistor Element Material :

SILICON

Pbfree Code :

yes

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

2360pF @ 25V

ECCN Code :

EAR99

Number of Elements :

1

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

370 mJ

Case Connection :

DRAIN

Series :

OptiMOS™

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Voltage (Vdss) :

55V

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

8.8m Ω @ 50A, 10V

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.0088Ohm

DS Breakdown Voltage-Min :

55V

Power Dissipation-Max :

190W Tc

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

4V @ 125μA

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

320A

Surface Mount :

yes