IPB80N06S209ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 125μA

Power Dissipation-Max :

190W Tc

Number of Elements :

1

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.0088Ohm

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

2360pF @ 25V

Published :

2006

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

DS Breakdown Voltage-Min :

55V

Pulsed Drain Current-Max (IDM) :

320A

Drain Current-Max (Abs) (ID) :

80A

Terminal Position :

Single

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

2

Mounting Type :

Surface Mount

Series :

OptiMOS™

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

Drain to Source Voltage (Vdss) :

55V

FET Type :

N-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Avalanche Energy Rating (Eas) :

370 mJ

Rds On (Max) @ Id, Vgs :

8.8m Ω @ 50A, 10V

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant