IPB80N06S208ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

14 ns

ECCN Code :

EAR99

Halogen Free :

Halogen Free

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

215W Tc

Mounting Type :

Surface Mount

Rise Time :

15ns

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Terminal Position :

Single

Turn On Delay Time :

14 ns

Drain-source On Resistance-Max :

0.0077Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

FET Type :

N-Channel

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

450 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Continuous Drain Current (ID) :

80A

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

96nC @ 10V

Published :

2006

Rds On (Max) @ Id, Vgs :

7.7m Ω @ 58A, 10V

Vgs (Max) :

±20V

Max Dual Supply Voltage :

55V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

2860pF @ 25V

Turn-Off Delay Time :

32 ns

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Configuration :

SINGLE WITH BUILT-IN DIODE

Radiation Hardening :

No

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Lead Free :

Contains Lead

Vgs(th) (Max) @ Id :

4V @ 150μA

Factory Lead Time :

10 Weeks

Number of Terminations :

2

Transistor Element Material :

SILICON

Series :

OptiMOS™