IPB80N06S208ATMA2
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- Mfr.Part #
- IPB80N06S208ATMA2
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 80A TO263-3
- Stock
- 12,804
- In Stock ：
- 12,804
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4V @ 150μA
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 2860pF @ 25V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Terminal Position :
- Single
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 215W Tc
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 450 mJ
- Rise Time :
- 15ns
- Drain-source On Resistance-Max :
- 0.0077Ohm
- Factory Lead Time :
- 10 Weeks
- Pbfree Code :
- yes
- Series :
- OptiMOS™
- Turn-Off Delay Time :
- 32 ns
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Contains Lead
- Halogen Free :
- Halogen Free
- Case Connection :
- DRAIN
- Fall Time (Typ) :
- 14 ns
- Turn On Delay Time :
- 14 ns
- Number of Terminations :
- 2
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 96nC @ 10V
- Max Dual Supply Voltage :
- 55V
- Published :
- 2006
- JESD-30 Code :
- R-PSSO-G2
- Continuous Drain Current (ID) :
- 80A
- Rds On (Max) @ Id, Vgs :
- 7.7m Ω @ 58A, 10V
- Datasheets
- IPB80N06S208ATMA2
N-Channel Tape & Reel (TR) 7.7m Ω @ 58A, 10V ±20V 2860pF @ 25V 96nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB80N06S208ATMA2 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 450 mJ.A device's maximum input capacitance is 2860pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 80A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 32 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 55V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.
IPB80N06S208ATMA2 Features
the avalanche energy rating (Eas) is 450 mJ
a continuous drain current (ID) of 80A
the turn-off delay time is 32 ns
IPB80N06S208ATMA2 Applications
There are a lot of Infineon Technologies
IPB80N06S208ATMA2 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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