IPB80N06S207ATMA4

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

6.3m Ω @ 68A, 10V

Vgs (Max) :

±20V

Published :

2010

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

250W Tc

JESD-609 Code :

e3

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

55V

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

80A

Number of Elements :

1

DS Breakdown Voltage-Min :

55V

Factory Lead Time :

10 Weeks

JESD-30 Code :

R-PSSO-G2

Series :

OptiMOS™

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Case Connection :

DRAIN

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 180μA

Avalanche Energy Rating (Eas) :

530 mJ

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Reach Compliance Code :

not_compliant

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Pulsed Drain Current-Max (IDM) :

320A

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

3400pF @ 25V

Drain-source On Resistance-Max :

0.0063Ohm