IPB80N06S207ATMA4

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 180μA

Drain to Source Voltage (Vdss) :

55V

Series :

OptiMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

6.3m Ω @ 68A, 10V

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

320A

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Drain Current-Max (Abs) (ID) :

80A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

10 Weeks

Power Dissipation-Max :

250W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

530 mJ

Published :

2010

Vgs (Max) :

±20V

Terminal Position :

Single

Drain-source On Resistance-Max :

0.0063Ohm

Input Capacitance (Ciss) (Max) @ Vds :

3400pF @ 25V

FET Type :

N-Channel

DS Breakdown Voltage-Min :

55V

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

Surface Mount :

yes