IPB80N06S205ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

OptiMOS™

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

RoHS Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

5110pF @ 25V

Number of Terminations :

2

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

320A

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Reference Standard :

AEC-Q101

DS Breakdown Voltage-Min :

55V

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

55V

Additional Feature :

ULTRA-LOW RESISTANCE

Drain-source On Resistance-Max :

0.0048Ohm

Number of Elements :

1

Published :

2006

Avalanche Energy Rating (Eas) :

810 mJ

Case Connection :

DRAIN

Terminal Position :

Single

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Rds On (Max) @ Id, Vgs :

4.8m Ω @ 80A, 10V

Surface Mount :

yes

Power Dissipation-Max :

300W Tc

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

Drain Current-Max (Abs) (ID) :

80A