IPB80N04S404ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 35μA

Published :

2010

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant

Mount :

Surface Mount

Factory Lead Time :

16 Weeks

Series :

OptiMOS™

Drain-source On Resistance-Max :

0.0042Ohm

Rise Time :

12ns

Number of Terminations :

2

Vgs (Max) :

±20V

Turn On Delay Time :

10 ns

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Lead Free :

Contains Lead

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Power Dissipation-Max :

71W Tc

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 80A, 10V

Halogen Free :

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds :

3440pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

80A

Max Dual Supply Voltage :

40V

Turn-Off Delay Time :

9 ns

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

100 mJ

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Tin (Sn)

Number of Pins :

3