IPB80N04S403ATMA1
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- Mfr.Part #
- IPB80N04S403ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 80A TO263-3-2
- Stock
- 21,949
- In Stock ：
- 21,949
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 16 Weeks
- ECCN Code :
- EAR99
- Number of Terminations :
- 2
- Series :
- OptiMOS™
- Halogen Free :
- Halogen Free
- Rise Time :
- 12ns
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Reach Compliance Code :
- not_compliant
- Terminal Finish :
- Tin (Sn)
- Max Dual Supply Voltage :
- 40V
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~175°C TJ
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Published :
- 2010
- Vgs (Max) :
- ±20V
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Power Dissipation-Max :
- 94W Tc
- Terminal Position :
- Single
- Continuous Drain Current (ID) :
- 80A
- JESD-30 Code :
- R-PSSO-G2
- Vgs(th) (Max) @ Id :
- 4V @ 53μA
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 5260pF @ 25V
- Lead Free :
- Contains Lead
- Turn On Delay Time :
- 14 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 66nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 3.3m Ω @ 80A, 10V
- Fall Time (Typ) :
- 16 ns
- Datasheets
- IPB80N04S403ATMA1
N-Channel Tape & Reel (TR) 3.3m Ω @ 80A, 10V ±20V 5260pF @ 25V 66nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB80N04S403ATMA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 200 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5260pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 14 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 40V.In addition to reducing power consumption, this device uses drive voltage (10V).
IPB80N04S403ATMA1 Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 80A
IPB80N04S403ATMA1 Applications
There are a lot of Infineon Technologies
IPB80N04S403ATMA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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