IPB80N04S3H4ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Series :

OptiMOS™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 80A, 10V

Halogen Free :

Halogen Free

Packaging :

Tape and Reel (TR)

Max Dual Supply Voltage :

40V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 65μA

Vgs (Max) :

±20V

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

3900pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

ECCN Code :

EAR99

Continuous Drain Current (ID) :

80A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Power Dissipation-Max :

115W Tc

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

2

Drain-source On Resistance-Max :

0.0048Ohm

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Published :

2008