IPB47N10S33ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Additional Feature :

AVALANCHE RATED

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 25V

JESD-609 Code :

e3

Reach Compliance Code :

not_compliant

Current - Continuous Drain (Id) @ 25°C :

47A Tc

Drain Current-Max (Abs) (ID) :

47A

Series :

SIPMOS®

Gate Charge (Qg) (Max) @ Vgs :

105nC @ 10V

Pulsed Drain Current-Max (IDM) :

188A

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

33m Ω @ 33A, 10V

Surface Mount :

yes

Number of Elements :

1

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

400 mJ

Vgs(th) (Max) @ Id :

4V @ 2mA

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.033Ohm

DS Breakdown Voltage-Min :

100V

Terminal Form :

Gull wing

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

175W Tc

Published :

2001

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

100V