IPB45N04S4L-08

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Resistance :

7.6 mΩ

Vgs (Max) :

+20V, -16V

Supplier Device Package :

PG-TO263-3-2

Input Capacitance :

2.34 nF

Continuous Drain Current (ID) :

45 A

Max Dual Supply Voltage :

40 V

FET Feature :

-

Package :

Bulk

Technology :

MOSFET (Metal Oxide)

FET Type :

N-Channel

Max Power Dissipation :

45 W

Series :

OptiMOS™T2

RoHS :

Compliant

Current - Continuous Drain (Id) @ 25°C :

45A (Tc)

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Vgs(th) (Max) @ Id :

2.2V @ 17µA

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20 V

Input Capacitance (Ciss) (Max) @ Vds :

2340 pF @ 25 V

Rds On Max :

7.6 mΩ

Mounting Type :

Surface Mount

Power Dissipation :

45 W

Drain to Source Voltage (Vdss) :

40 V

Max Operating Temperature :

175 °C

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Length :

10 mm

Rds On (Max) @ Id, Vgs :

7.9mOhm @ 45A, 10V

Number of Pins :

3

Rise Time :

8 ns

Product Status :

Active

Power Dissipation (Max) :

45W (Tc)

Min Operating Temperature :

-55 °C

Halogen Free :

Halogen Free

Drain to Source Breakdown Voltage :

40 V

Width :

9.25 mm

Height :

4.4 mm

Operating Temperature :

-55°C ~ 175°C (TJ)

Turn-Off Delay Time :

11 ns

Gate Charge (Qg) (Max) @ Vgs :

30 nC @ 10 V

Element Configuration :

Single

Turn-On Delay Time :

4 ns