IPB45N06S3L-13

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

95 mJ

Gate to Source Voltage (Vgs) :

16V

Mount :

Surface Mount

Case Connection :

DRAIN

Power Dissipation :

65W

Input Capacitance (Ciss) (Max) @ Vds :

3600pF @ 25V

Rise Time :

46ns

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

Voltage - Rated DC :

55V

Peak Reflow Temperature (Cel) :

260

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

2.2V @ 30μA

Terminal Finish :

MATTE TIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

45A

Vgs (Max) :

±16V

Published :

2007

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

55V

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

13.1m Ω @ 26A, 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Terminations :

2

FET Type :

N-Channel

Additional Feature :

LOGIC LEVEL COMPATIBLE

Terminal Form :

Gull wing

Fall Time (Typ) :

124 ns

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Series :

OptiMOS™

Number of Elements :

1

Power Dissipation-Max :

65W Tc

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

45A Tc

Lead Free :

Lead Free

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

40

Current Rating :

45A

Pin Count :

4

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

58 ns

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant