IPB407N30NATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

4.7mm

Drain to Source Breakdown Voltage :

300V

Published :

2013

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Terminal Form :

Gull wing

FET Type :

N-Channel

Max Junction Temperature (Tj) :

175°C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Contains Lead

Packaging :

Tape and Reel (TR)

Series :

OptiMOS™

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

240 mJ

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

Max Dual Supply Voltage :

300V

Halogen Free :

Halogen Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

44A Tc

Power Dissipation-Max :

300W Tc

Case Connection :

DRAIN

Number of Channels :

1

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

7180pF @ 100V

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

44A

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.0407Ohm

Vgs(th) (Max) @ Id :

4V @ 270μA

Rds On (Max) @ Id, Vgs :

40.7m Ω @ 44A, 10V

Number of Elements :

1

Turn-Off Delay Time :

43 ns

Factory Lead Time :

13 Weeks

Terminal Position :

Single

Reach Compliance Code :

not_compliant

Turn On Delay Time :

16 ns

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

87nC @ 10V