IPB45N06S3-16

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

68 ns

ECCN Code :

EAR99

Pin Count :

4

Drain to Source Breakdown Voltage :

55V

Mount :

Surface Mount

Power Dissipation :

65W

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 10V

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

95 mJ

Lead Free :

Lead Free

Vgs (Max) :

±20V

FET Type :

N-Channel

Terminal Form :

Gull wing

Turn-Off Delay Time :

26 ns

Published :

2007

Qualification Status :

Not Qualified

Power Dissipation-Max :

65W Tc

Series :

OptiMOS™

Number of Elements :

1

Voltage - Rated DC :

55V

Case Connection :

DRAIN

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

40

Rds On (Max) @ Id, Vgs :

15.4m Ω @ 23A, 10V

Continuous Drain Current (ID) :

45A

Current Rating :

45A

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

2980pF @ 25V

Terminal Finish :

MATTE TIN

Rise Time :

61ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current - Continuous Drain (Id) @ 25°C :

45A Tc

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

4V @ 30μA