IPB45N06S409ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

71W Tc

Vgs (Max) :

±20V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Channels :

1

Element Configuration :

Single

Mount :

Surface Mount

Max Dual Supply Voltage :

60V

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

45A Tc

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

9.4m Ω @ 45A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

97 mJ

Operating Temperature :

-55°C~175°C TJ

Height :

4.4mm

Vgs(th) (Max) @ Id :

4V @ 34µA

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Turn On Delay Time :

15 ns

Fall Time (Typ) :

5 ns

Continuous Drain Current (ID) :

45A

Input Capacitance (Ciss) (Max) @ Vds :

3785pF @ 25V

Width :

9.25mm

Number of Elements :

1

Transistor Element Material :

SILICON

Published :

2009

Turn-Off Delay Time :

20 ns

Rise Time :

40ns

JESD-30 Code :

R-PSSO-G2

Length :

10mm

Reach Compliance Code :

not_compliant

Series :

Automotive, AEC-Q101, OptiMOS™

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Weight :

1.946308g

FET Type :

N-Channel