IPB45P03P4L11ATMA1

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Mfr.Part #
IPB45P03P4L11ATMA1
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET P-CH 30V 45A TO263-3
Stock
1
In Stock :
1

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-30 Code :
R-PSSO-G2
Terminal Form :
Gull wing
Fall Time (Typ) :
14 ns
FET Type :
P-Channel
Series :
Automotive, AEC-Q101, OptiMOS™
Case Connection :
DRAIN
Input Capacitance (Ciss) (Max) @ Vds :
3770pF @ 25V
JESD-609 Code :
e3
Width :
9.25mm
Number of Pins :
3
Power Dissipation-Max :
58W Tc
Packaging :
Tape and Reel (TR)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Length :
10mm
Current - Continuous Drain (Id) @ 25°C :
45A Tc
Lead Free :
Contains Lead
Transistor Element Material :
SILICON
Avalanche Energy Rating (Eas) :
110 mJ
Power Dissipation :
58W
Vgs (Max) :
+5V, -16V
Number of Terminations :
2
Mount :
Surface Mount
Operating Temperature :
-55°C~175°C TJ
Pulsed Drain Current-Max (IDM) :
180A
RoHS Status :
ROHS3 Compliant
Gate Charge (Qg) (Max) @ Vgs :
55nC @ 10V
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Elements :
1
Drain to Source Voltage (Vdss) :
30V
Mounting Type :
Surface Mount
Factory Lead Time :
14 Weeks
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain-source On Resistance-Max :
0.0111Ohm
Halogen Free :
Halogen Free
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Rds On (Max) @ Id, Vgs :
10.8m Ω @ 45A, 10V
Rise Time :
3ns
Turn-Off Delay Time :
45 ns
Additional Feature :
LOGIC LEVEL COMPATIBLE
Vgs(th) (Max) @ Id :
2V @ 85µA
ECCN Code :
EAR99
Drain to Source Breakdown Voltage :
-30V
Continuous Drain Current (ID) :
-45A
Max Dual Supply Voltage :
-30V
Published :
2008
Element Configuration :
Single
Gate to Source Voltage (Vgs) :
5V
Terminal Finish :
Tin (Sn)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Turn On Delay Time :
7 ns
Operating Mode :
ENHANCEMENT MODE
Height :
4.4mm
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPB45P03P4L11ATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, IPB45P03P4L11ATMA1 pinout, IPB45P03P4L11ATMA1 datasheet PDF, IPB45P03P4L11ATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPB45P03P4L11ATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPB45P03P4L11ATMA1


P-Channel Tape & Reel (TR) 10.8m Ω @ 45A, 10V +5V, -16V 3770pF @ 25V 55nC @ 10V 30V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPB45P03P4L11ATMA1 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 110 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3770pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -30V.As a result of its turn-off delay time, which is 45 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 180A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 7 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 5VV.The maximum dual supply voltage can be supported by -30V.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

IPB45P03P4L11ATMA1 Features


the avalanche energy rating (Eas) is 110 mJ
a continuous drain current (ID) of -45A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 180A.
a 30V drain to source voltage (Vdss)


IPB45P03P4L11ATMA1 Applications


There are a lot of Infineon Technologies
IPB45P03P4L11ATMA1 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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