IMH23T110

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Breakdown Voltage :

20V

Max Power Dissipation :

300mW

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

10

Lead Free :

Lead Free

Resistor - Base (R1) :

4.7k Ω

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity :

NPN

Terminal Form :

Gull wing

Number of Terminations :

6

Base Part Number :

*MH23

Transistor Type :

2 NPN - Pre-Biased (Dual)

Emitter Base Voltage (VEBO) :

12V

JESD-609 Code :

e1

Height :

1.2mm

Length :

3mm

Number of Elements :

2

Collector Emitter Breakdown Voltage :

20V

Transition Frequency :

150MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

820 @ 50mA 5V

Mount :

Surface Mount

Collector Emitter Saturation Voltage :

150mV

Power Dissipation :

300mW

Vce Saturation (Max) @ Ib, Ic :

150mV @ 2.5mA, 50mA

Pin Count :

6

Min Operating Temperature :

-55°C

ECCN Code :

EAR99

Max Collector Current :

600mA

Max Operating Temperature :

150°C

Peak Reflow Temperature (Cel) :

260

HTS Code :

8541.21.00.75

Width :

1.8mm

Factory Lead Time :

13 Weeks

Number of Pins :

6

Element Configuration :

Dual

Frequency - Transition :

150MHz

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Radiation Hardening :

No

Package / Case :

SC-74, SOT-457

hFE Min :

820

Published :

2004

Collector Emitter Voltage (VCEO) :

20V

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant