IMH2AT110

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Terminal Form :

Gull wing

Collector Emitter Voltage (VCEO) :

300mV

Max Output Current :

100mA

Max Power Dissipation :

300mW

Mount :

Surface Mount

Lead Free :

Lead Free

hFE Min :

68

Published :

2005

Time@Peak Reflow Temperature-Max (s) :

10

Peak Reflow Temperature (Cel) :

260

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Resistor - Emitter Base (R2) :

47k Ω

Max Breakdown Voltage :

50V

Mounting Type :

Surface Mount

Transistor Type :

2 NPN - Pre-Biased (Dual)

Number of Pins :

6

Resistor - Base (R1) :

47k Ω

Pin Count :

6

Factory Lead Time :

13 Weeks

Packaging :

Tape and Reel (TR)

HTS Code :

8541.21.00.75

Voltage - Rated DC :

50V

Min Operating Temperature :

-55°C

Frequency - Transition :

250MHz

Base Part Number :

*MH2

Element Configuration :

Dual

Polarity :

NPN

ECCN Code :

EAR99

JESD-609 Code :

e1

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Current Rating :

30mA

Current - Collector Cutoff (Max) :

500nA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Collector Current :

100mA

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Pbfree Code :

yes

Number of Terminations :

6

Number of Elements :

2

VCEsat-Max :

0.3 V

Max Collector Current :

100mA

Radiation Hardening :

No

Transition Frequency :

250MHz

RoHS Status :

ROHS3 Compliant

Package / Case :

SC-74, SOT-457

Terminal Finish :

TIN SILVER COPPER

Collector Emitter Breakdown Voltage :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Operating Supply Voltage :

50V

Power Dissipation :

300mW

Max Operating Temperature :

150°C