IMH21T110

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Emitter Base Voltage (VEBO) :

12V

Polarity :

NPN

Min Operating Temperature :

-55°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SMD/SMT

Length :

3mm

Terminal Form :

Gull wing

Number of Elements :

2

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Max Operating Temperature :

150°C

Max Breakdown Voltage :

20V

Collector Emitter Breakdown Voltage :

20V

Pin Count :

6

Peak Reflow Temperature (Cel) :

260

Collector Emitter Voltage (VCEO) :

20V

Power Dissipation :

300mW

ECCN Code :

EAR99

hFE Min :

820

Lead Free :

Lead Free

Width :

1.8mm

Mount :

Surface Mount

Element Configuration :

Dual

Pbfree Code :

yes

Terminal Finish :

TIN SILVER COPPER

Number of Terminations :

6

Number of Pins :

6

Time@Peak Reflow Temperature-Max (s) :

10

RoHS Status :

ROHS3 Compliant

Max Collector Current :

600mA

Continuous Collector Current :

600mA

Max Power Dissipation :

300mW

Factory Lead Time :

7 Weeks

Collector Emitter Saturation Voltage :

150mV

JESD-609 Code :

e1

DC Current Gain-Min (hFE) :

820

Published :

2014

Height :

1.2mm

HTS Code :

8541.21.00.75

Transistor Application :

SWITCHING

Transition Frequency :

150MHz