IMD1AT108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

hFE Min :

100

Max Power Dissipation :

300mW

Mounting Type :

Surface Mount

Additional Feature :

Digital

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Collector Emitter Breakdown Voltage :

50V

Transition Frequency :

250MHz

Terminal Finish :

TIN SILVER COPPER

Radiation Hardening :

No

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 5mA

Package / Case :

SC-74, SOT-457

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

50V

Max Output Current :

100mA

Current Rating :

100mA

VCEsat-Max :

0.3 V

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Dual

RoHS Status :

ROHS3 Compliant

Operating Supply Voltage :

50V

Pin Count :

6

Frequency - Transition :

250MHz

Polarity :

NPN, PNP

Transistor Element Material :

SILICON

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Time@Peak Reflow Temperature-Max (s) :

10

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

HTS Code :

8541.21.00.75

Max Collector Current :

100mA

JESD-609 Code :

e1

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Number of Terminations :

6

Number of Elements :

2

Resistor - Base (R1) :

22k Ω

Published :

1998

Mount :

Surface Mount

Pbfree Code :

yes

Max Operating Temperature :

150°C