IMD10AT108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

JESD-609 Code :

e1

Collector Emitter Breakdown Voltage :

50V

Max Power Dissipation :

300mW

Height :

1.1mm

Width :

1.6mm

Operating Supply Voltage :

50V

Transition Frequency :

250MHz

Continuous Collector Current :

-500mA

Emitter Base Voltage (VEBO) :

5V

Package / Case :

SC-74, SOT-457

Resistor - Base (R1) :

10k Ω, 100 Ω

Polarity :

NPN, PNP

Max Operating Temperature :

150°C

Time@Peak Reflow Temperature-Max (s) :

10

Packaging :

Tape and Reel (TR)

Number of Elements :

2

HTS Code :

8541.21.00.75

Power Dissipation :

300mW

hFE Min :

100

Min Operating Temperature :

-55°C

Collector Emitter Saturation Voltage :

300mV

Factory Lead Time :

13 Weeks

Current - Collector (Ic) (Max) :

100mA 500mA

Max Output Current :

500mA

Vce Saturation (Max) @ Ib, Ic :

300mV @ 1mA, 10mA / 300mV @ 5mA, 100mA

Mount :

Surface Mount

Base Part Number :

MD10A

Collector Emitter Voltage (VCEO) :

300mV

Frequency - Transition :

250MHz 200MHz

Peak Reflow Temperature (Cel) :

260

Pin Count :

6

Current - Collector Cutoff (Max) :

500nA

Current Rating :

100mA

Transistor Application :

SWITCHING

Pbfree Code :

yes

JESD-30 Code :

R-PDSO-G6

Max Breakdown Voltage :

50V

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Resistor - Emitter Base (R2) :

10k Ω

Length :

2.9mm

ECCN Code :

EAR99

Max Collector Current :

500mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V / 68 @ 100mA 5V

Radiation Hardening :

No

Published :

2005

Number of Pins :

74

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Element Configuration :

Dual

Lead Free :

Lead Free

Contact Plating :

Copper, Silver, Tin

Number of Terminations :

6

Terminal Finish :

TIN SILVER COPPER

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 10

RoHS Status :

ROHS3 Compliant