IMD14T108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

300mV

Number of Terminations :

6

Max Power Dissipation :

300mW

Max Collector Current :

500mA

Factory Lead Time :

10 Weeks

Min Operating Temperature :

-55°C

HTS Code :

8541.21.00.75

JESD-609 Code :

e1

Mount :

Surface Mount

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 100mA

Pin Count :

6

Number of Elements :

2

Resistor - Base (R1) :

220 Ω

Transition Frequency :

250MHz

Base Part Number :

MD14

JESD-30 Code :

R-PDSO-G6

hFE Min :

82

DC Current Gain (hFE) (Min) @ Ic, Vce :

82 @ 100mA 5V

Collector Emitter Breakdown Voltage :

50V

Transistor Application :

SWITCHING

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 45.5

Published :

1999

Continuous Collector Current :

500mA

Power Dissipation :

300mW

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Current Rating :

500mA

Frequency - Transition :

250MHz

Polarity :

NPN, PNP

ECCN Code :

EAR99

Max Operating Temperature :

150°C

Element Configuration :

Dual

Mounting Type :

Surface Mount

Max Breakdown Voltage :

50V

Current - Collector Cutoff (Max) :

500nA

Radiation Hardening :

No

Resistor - Emitter Base (R2) :

10k Ω

Time@Peak Reflow Temperature-Max (s) :

10

Terminal Finish :

TIN SILVER COPPER

Packaging :

Tape and Reel (TR)

Package / Case :

SC-74, SOT-457