HFA3127BZ

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - Bipolar (BJT) - RF

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

RoHS Status :

RoHS Compliant

JEDEC-95 Code :

MS-012AC

Max Collector Current :

65mA

Number of Terminations :

16

Polarity :

NPN

Packaging :

Bulk

Collector Emitter Voltage (VCEO) :

8V

Height :

1.5mm

Max Operating Temperature :

125°C

Power Dissipation-Max :

150mW

Power Dissipation :

150mW

Voltage - Rated DC :

8V

DC Current Gain-Min (hFE) :

40

Number of Pins :

16

Transistor Application :

AMPLIFIER

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Matte Tin (Sn) - annealed

Terminal Form :

Gull wing

Emitter Base Voltage (VEBO) :

5.5V

Factory Lead Time :

7 Weeks

Frequency :

8GHz

Configuration :

SEPARATE, 5 ELEMENTS

Time@Peak Reflow Temperature-Max (s) :

30

Min Operating Temperature :

-55°C

ECCN Code :

EAR99

Transition Frequency :

8000MHz

Gain Bandwidth Product :

8 GHz

HTS Code :

8541.21.00.75

Number of Elements :

5

Current Rating :

65mA

Radiation Hardening :

No

Width :

4mm

JESD-609 Code :

e3

Pbfree Code :

yes

Frequency - Transition :

8GHz

Continuous Collector Current :

65mA

Lead Free :

Lead Free

Published :

2000

Collector Base Voltage (VCBO) :

12V

Frequency (Max) :

8GHz

REACH SVHC :

No SVHC

Package / Case :

SOIC

Length :

10mm

Collector Emitter Saturation Voltage :

500mV

Terminal Position :

Dual

Pin Count :

16

Collector Emitter Breakdown Voltage :

8V

Mount :

Surface Mount