HFA3046B

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - Bipolar (BJT) - RF

Voltage - Rated DC :

8V

DC Current Gain-Min (hFE) :

40

Width :

4mm

Collector Base Voltage (VCBO) :

12V

Transition Frequency :

8000MHz

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

8V

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Position :

Dual

Max Collector Current :

65mA

Gain Bandwidth Product :

8 GHz

Packaging :

Bulk

Min Operating Temperature :

-55°C

Max Operating Temperature :

125°C

Length :

8.75mm

Power Dissipation-Max :

150mW

Collector Emitter Breakdown Voltage :

12V

JEDEC-95 Code :

MS-012AB

Pbfree Code :

yes

Height :

1.5mm

JESD-609 Code :

e3

Frequency (Max) :

8GHz

Collector Emitter Saturation Voltage :

500mV

Number of Terminations :

14

Number of Elements :

5

Mount :

Surface Mount

Emitter Base Voltage (VEBO) :

5.5V

Frequency :

8GHz

Current Rating :

65mA

RoHS Status :

RoHS Compliant

Package / Case :

SOIC

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

2 Weeks

Polarity :

NPN

Lead Free :

Lead Free

Terminal Form :

Gull wing

Contact Plating :

Tin

Transistor Application :

AMPLIFIER

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Continuous Collector Current :

65mA

Number of Pins :

14

Frequency - Transition :

8GHz

Pin Count :

14

ECCN Code :

EAR99

Configuration :

COMPLEX

Published :

2000

Power Dissipation :

150mW