FSB660A
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- Mfr.Part #
- FSB660A
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 2A SOT23-3
- Stock
- 13,269
- In Stock ：
- 13,269
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- -5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Transition Frequency :
- 75MHz
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 20 Weeks
- Length :
- 2.92mm
- Width :
- 1.4mm
- Collector Base Voltage (VCBO) :
- -60V
- Power Dissipation :
- 500mW
- Polarity/Channel Type :
- PNP
- Transistor Element Material :
- SILICON
- hFE Min :
- 250
- Voltage - Rated DC :
- -60V
- Frequency :
- 75MHz
- Terminal Position :
- Dual
- Height :
- 940μm
- Max Breakdown Voltage :
- 60V
- Current Rating :
- -2A
- Gain Bandwidth Product :
- 75MHz
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Collector Current :
- 2A
- Base Part Number :
- FSB660
- Weight :
- 30mg
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 60V
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 500mA 2V
- Published :
- 2017
- Mount :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 300mV
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Form :
- Gull wing
- Terminal Finish :
- Tin (Sn)
- Max Power Dissipation :
- 500mW
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 2A
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 60V
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- FSB660A
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FSB660A Overview
This device has a DC current gain of 250 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.A VCE saturation (Max) of 300mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -2A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 75MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 2A volts is possible.
FSB660A Features
the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 75MHz
FSB660A Applications
There are a lot of ON Semiconductor
FSB660A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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